Download Chemical Vapor Deposition of Tungsten and Tungsten Silicides by John E.J. Schmitz PDF

By John E.J. Schmitz

This monograph condenses the proper and pertinent literature on blanket and selective CVD of tungsten (W) right into a unmarried practicable quantity. The ebook offers the reader with the mandatory heritage to raise, effective track, and effectively hold a CVD-W procedure in a creation set-up. fabrics deposition chemistry, gear, method expertise, advancements, and functions are defined.

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Additional resources for Chemical Vapor Deposition of Tungsten and Tungsten Silicides for VLSI/ ULSI Applications

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45 , McConica et a1. 7) where PWF6 and P H2 are the partial pressures of WF6 and Hz respectively. For the silane chemistry it has been found [Schmitz et a1. 48 , RosIer et a1. 8) where P SiH4 represents the silane partial pressure. We see that the local pressures of the reducers determine the local growth rates and consequently the step coverage. 7 [Kleijn et a1. 8 are no longer valid. The local concentrations needed in these equations are deternlined by the rate of consumption (because of the surface reactions) and the rate 27 The blanket tungsten approach Knudsen cliff.

The whole procedure resembles a resist etch back (REB) method for oxide planarization. 5 DEGREE OF PIANARIZATION AND THE CONTACT DIAME1'ER Before the blanket fill process can be applied, two important parameters need to be considered. These are the variation in the diameter of the contact/via openings and the degree of planarization of the dielectric layers. The diameter of the contact: Paradoxically there is an upper limit to the contact diameter. 21. Normally one doesn't want to deposit more than ca.

We have to realize that the growth rate at any time at any given surface point is determined by the reaction kinetics. It has been found [Broadbent et a1. 44 , Pauleau et a1. 45 , McConica et a1. 7) where PWF6 and P H2 are the partial pressures of WF6 and Hz respectively. For the silane chemistry it has been found [Schmitz et a1. 48 , RosIer et a1. 8) where P SiH4 represents the silane partial pressure. We see that the local pressures of the reducers determine the local growth rates and consequently the step coverage.

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